ITEM DESCRIPTION
Gun Size 2~16inch (Magnetron Sputter Gun)
Substrate Size ~ 200mm (option)
Process Gas Ar,O2,N2
Deposition Direction Up or Downward
Process Temp ~ 700 C
Thickness Uniformity <±3%
Heating Uniformity ±3%
Load Lock System
Full Automation Control
ITEM DESCRIPTION
Substrate Size 156mm² solar wafer, 12pcs(3.5G case, Option)
Sputtering Source based 1set (Option), Aprox 100 x 800m² 8T
Process Gas Ar,O2,N2
Deposition Direction Up or Downward
Al Film Thickness 2m
Uniformity WIW,WTW,RTR ±5%.
ITEM DESCRIPTION
Substrate Size ~ 6inch
Process Gas SiH4,GeH4,B2H6,PH3,Si2H6,H2,Ar
Process Temperature ~ 800 C
Halogen Lamp, Heating Load Lock, System Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 200mm (Option)
Etching Direction Downward
Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6
Etching Uniformity ±5%
Load Lock System, Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 8inch
Deposition Direction Upward
E-BEAM Source ~ 15kw
Thickness Uniformity ± 3%
Heating Uniformity ± 3%
Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 8inch
Deposition Direction Upward
Thermal Source ~ 10V, 300A
Thickness Uniformity ± 3%
Heating Uniformity ± 3%
Full Automation Control.
ITEM DESCRIPTION
Consisting of Evaporation,Sputter,Parylene,Glove Box,Loadlock
Tact time 20~80 min Depends on the number of mask
Loading Capacity Glass 1 Sheet, Mask 4 Sheet
Transfer Methode Vacuum Robot
Plasma Treatment Optional
Evaporation Source for Organic (5ea) 10cc for host, 4cc for dopant
Evaporation Source for metal (2ea) Thermal Source, E-Beam is optional
Deposition Uniformity Organic, Metal, Sputter less than ±3%
Max. deposition rate Organic 5A/sec, metal 10A/sec
Rate Accuracy Organic ±5%, Metal ±7%
Thickness reliability Organic & Metal ±5% glass to glass
Conductive Oxide Low Damage Sputtering (FTS or General Sputter)
Doping ratio less than 1% at 1A/sec of host.
ITEM DESCRIPTION
Substrate Size 2 inch
Heating Source Halogen Lamp
Deposition Direction Up or Downward
Process Temp ~ 1000 C
Heating Uniformity ±3%
Toggle Switch Control or Touch Panel Control.
ITEM DESCRIPTION
Substrate Size ~ 200mm (Option)
Deposition Direction Downward
Plasma Source RF & VHF Power Supply
Process Gas Any of Requested Gas based on Ar,O2
Process Temperature ~ 700 C
Uniformity ±3%
Heating Uniformity ±3%
Full Automation Control, Load Lock System.
ITEM DESCRIPTION
Substrate Size 156mm² solar wafer, 4pcs
Deposition Direction Downward
Plasma Source RF & VHF Power Supply
Process Gas Any of Requested Gas (Solar : Si3N4,SiO2,Al2O3)
Process Temperature ~ 700 C
Uniformity ±3%
Heating Uniformity ±3%
Full Automation Control, Load Lock System
ITEM DESCRIPTION
Substrate Size ~ 6inch
Deposition Direction Downward
Process Gas Any of Requested Gas
Process Temperature ~ 1000 C on Substrate
Uniformity ±3%
Heating Uniformity ±3%
Full Automation Control, Load Lock System
ITEM DESCRIPTION
Substrate Size ~ 6inch
Deposition Direction Downward
Process Gas Any of Requested Gas
Process Temperature ~ 700 C on Substrate
Source Heat Bubbler for Mo Source
Thickness Uniformity ±5%
Heating Uniformity ±3%
Load Lock System, Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 200mm (Option)
Etching Direction Downward
Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6
Etching Uniformity ±5%
Load Lock System, Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 12.5 inch
Etching Direction Downward
Process Gas Any of Requested Gas Based on Ar,O2,CF4,SF6
Etching Uniformity ±5%
Load Lock System, Full Automation Control
ITEM DESCRIPTION
Substrate Size ~ 8inch
Heating Source Halogen Lamp
Deposition Direction Up or Downward
Process Temp ~ 1000 C
Heating Uniformity ±3%
Toggle Switch Control or Touch Panel Control.
ITEM DESCRIPTION
Substrate Size 125mm² 16pcs, 156mm² 9pcs
Heating Source Halogen Lamp
Deposition Direction Up or Downward
Process Temp ~ 1100 C
Heating Uniformity ±5%
Sustain Time More Than 2min. at 1100
Lamping Rate 10 to 20 C / sec
Cooling Rate 5 to 20 C / sec
Gas mixing capability with MFC .
ITEM DESCRIPTION
Application The Cluster type equipment for the manuf acture of CIGS Solarcell.
Mo layer-CIGS la yer- IZnO-TCO layer etc. Sequentially form ation.
Substrate Type Glass & Wafer
Substrate Size ~ 200mm (option)
Metal Sputter Mo,ZnO,TCO
CIGS Evaporator Cu,In,Ga,Se Using effusion source
Glass Heating Max 300
ITEM DESCRIPTION
Application The Cluster type equipment for the manuf acture of a-Si Solar Cell. Back Contact la yer
Absorb layer-Front contact layer etc. S equentially formation.
Substrate Type Glass & Wafer
Substrate Size ~ 200mm (option)
Metal Sputter AZO,Ag & etc
PE-CVD PIN Layer
Glass Heating Max 300 C
