Supplier : Transformers e:g high voltage transformer (35 66kv), furnace transformers (35 66kv), inverter/converter duty transformer(35 66kv), sll 50 3150/35 double winding non excitation voltage regulating distribution transformer, three phase oil immersed full seal without excitation voltage transformers
Services : Designing, engineering, and producing Established: 2007
Standards: GR202032006642
Verification Status
Contact Details:
Tongshan Economic Development Zone Industrial Park , No. 2 Qianjiang Road, Xuzhou, Jiangsu Province, China
Xuzhou
221116
Jiangsu
China
INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:
High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
Product Introduction
Capacitive voltage transformer (CVT) in calibration the test must be conducted under the condition of 50Hz frequency complex geographical condition on site at the same time the traditional experiment device is difficult to meet the requirements of on-site handling testing series resonance booster device is first used in domestic field tunable resonance device has been widely used in domestic 500 kv and below the field calibration of capacitor voltage transformer.
Product Parameters
Technical parameters
Rated Capacity 80kVA
rated voltage 160kV
Adjustable inductance range 65~130H
Rated frequency 50Hz
Rated current 0.5A
Adjustable gap range 0~300mm
Low remanence ratio
Low core losses
Low hysteresis telescopic
Low leakage induction
High saturation flux density
High permeability
High Curie temperature
Compact structure, high mechanical strength, easy installation.
