Find Verified Sg01S B18 Uvb Only Sic Based Uv Photodiode Suppliers, Manufacturers and Wholesalers

SG01S-B18
UVB-only SiC based UV photodiode A = 0.06 mm2

Properties of the SG01S-B18 UV Photodiode
* UVB-only sensitivity, PTB reported high chip stability
* Active Area A = 0.06 mm2
* TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 750 nA

SG01S-B18 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 - 309nm
Active Area: 0.06mm2
Dark Current (1V reverse bias): 0.2fA
Capacitance: 15pF
Short Circuit: 750nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

SG01M-B18
UVB-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-B18 UV Photodiode
* UVB-only sensitivity, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2500 nA

SG01M-B18 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 - 309nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak) : 2500nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

SG01M-B5
UVB-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-B5 UV Photodiode
* UVB-only sensitivity, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2500 nA

SG01M-B5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 to 309nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak): 2500nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Reverse Voltage: 20V

SG01S-C18
UVC-only SiC based UV photodiode A = 0.06 mm2

Properties of the SG01S-C18 UV Photodiode
* UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability
* Active Area A = 0.06 mm2
* TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 720 nA

SG01S-C18 UV Photodiode Specifications
* Typical Responsivity at Peak Wavelength: 0,120/AW
* Wavelength of max. Spectral Responsivity: 275nm
* Responsivity Range: 225 - 287nm
* Active Area: 0.06mm2
* Dark Current (1V reverse bias): 0.2fA
* Capacitance: 15pF
* Short Circuit (10mW/cm2 at peak): 720nA
* Temperature Coefficient: < 0.1%/K
* Operating Temperature: -55 ~ +170°C
* Storage Temperature: -55 ~ +170°C
* Soldering Temperature (3s): 260°C

SG01S-18S
Broadband SiC based UV photodiode A = 0.06 mm2

Properties of the SG01S-18S UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 0.06 mm2
* TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
*10mW/cm2 peak radiation results a current of approx. 780 nA

SG01S-18S UV Photodiode SpecIfication
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 0.06 mm2
Dark Current (1V reverse bias): 0.2fA
Capacitance: 15pF
Short Circuit (10mW/cm2 at peak): 780nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Reverse Voltage: 20V

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Skin is protected against sunburn and skin aging.
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Its texture is enriched with hyaluronic acid for easy application, without whitening or greasy skin.
The freshness of this Care provides a pleasant feeling every time it is applied.
The hypoallergenic formula is dermatologically tested on sensitive skin.
A formula without fragrances
. The 300 ml size is very suitable for families.

Indications:
For light-skinned men and women who are looking for high sun protection for body and face

Properties of the sg01d-a18 uv photodiode
* uva-only sensitivity, ptb reported high chip stability
* active area a = 0.50 mm2
* to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10µw/cm2 peak radiation results a current of approx. 1.85 na

Spectral characteristic
Typical responsivity at peak wavelength: 0.037/aw
Wavelength of max. Spectral responsivity: 331nm
Responsivity range: 309 - 367nm

Active area: 0.50mm2
Dark current (1v reverse bias): 1.7fa
Capacitance: 125pf
Short circuit (10µw/cm2 at peak): 1.85na
Temperature coefficient: < 0.1%/k

Maximum rating
Operating temperature: -55 - +170'c
Storage temperature: -55 - +170'c
Soldering temperature (3s): 260'c
Reverse voltage: 20v

SG01M-C5
UVC-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-C5 UV Photodiode
* UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2400 nA

SG01M-C5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.120/AW
Wavelength of max. Spectral Responsivity: 275nm
Responsivity Range: 225 - 287nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak): 2400nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C

SG01XL-C5
UVC-only SiC based UV photodiode A = 7,6 mm2

Properties of the SG01XL-C5 UV Photodiode
* UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability
* Active Area A = 7,6 mm2
* TO5 hermetically sealed metal housing, 1 isolated pin and 1 cas e pin
* 10µW/cm2 peak radiation results a current of approx. 91 nA

SG01XL-C5 UV Photodiode Specifications
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Active Area: 7.6mm2
Dark Current (1V reverse bias): 25.3fA
Capacitance: 1900pF
Short Circuit (10µW/cm2 at peak): 91nA
Temperature Coefficient: < -0,1%/K
Wavelength of max. Spectral Responsivity: 275nm
Responsivity Range: 225 - 287nm

SG01XL-5
Broadband SiC based UV photodiode A = 7,6 mm2

Properties of the SG01XL-5 UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 7.6 mm2
* TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10µW/cm2 peak radiation results a current of approx. 99 nA

SG01XL-5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 7.6mm2
Dark Current (1V reverse bias): 25.3fA
Capacitance: 1900pF
Short Circuit (10µW/cm2 at peak): 99nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

SG01L-5
Broadband SiC based UV photodiode A = 1.0 mm2

Properties of the SG01L-5 UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 1.0 mm2
* TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10µW/cm2 peak radiation results a current of approx. 13 nA

SG01L-5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 1.0mm2
Dark Current (1V reverse bias): 3.3fA
Capacitance: 250pF
Short Circuit (10µW/cm2 at peak): 13nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Reverse Voltage: 20V

SG01L-5LENS
Concentrator lens SiC based UV photodiode Avirtual = 55 mm2

Properties of the SG01L-5LENS UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection
* Radiation sensitive area A = 55 mm2
* TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
* 10µW/cm2 peak radiation results a current of approx. 700 nA

SG01L-5LENS UV Photodiod Specifications
* Typical Responsivity at Peak Wavelength: 0.130/AW
* Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
* Sensitive Area (chip size = 0.20 mm2): 55mm2
* Dark Current (1V reverse bias): 3.5fA
* Capacitance: 250pF
* Short Circuit (10µW/cm2 at peak): 700nA
* Temperature Coefficient: < 0.1%/K
* Operating Temperature: -55 ~ +170'C
* Storage Temperature: -55 ~ +170'C
* Soldering Temperature (3s): 260'C
* Reverse Voltage: 20V

Concentrator lens sic based uv photodiode sensor sg01d-5lens
Avirtual = 11, 0 mm2

Properties of the sg01d–5lens uv photodiode
• broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
• radiation sensitive area a = 11, 0 mm2
• to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µw/cm2 peak radiation results a current of approx. 350 na

About the material silicon carbide (sic)
Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).

Options
Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

SG01XL-5
Broadband SiC based UV photodiode A = 7,6 mm2

Properties of the SG01XL-5 UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 7.6 mm2
* TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10µW/cm2 peak radiation results a current of approx. 99 nA

SG01XL-5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 7.6mm2
Dark Current (1V reverse bias): 25.3fA
Capacitance: 1900pF
Short Circuit (10µW/cm2 at peak): 99nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Reverse Voltage: 20V

SG01M-18S
Broadband SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-18S UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2600 nA

SG01M-18S UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak): 2600nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

Sg01l-5lens
Concentrator lens sic based uv photodiode avirtual = 55 mm2

Properties of the sg01l-5lens uv photodiode
Broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
Radiation sensitive area a = 55 mm2
To5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10âµw/cm2 peak radiation results a current of approx. 700 na

Sg01l-5lens uv photodiod specifications
Sensitive area: 55 mm2
Dark current: 3.5 fa
Capacitance: 250 pf
Responsivity range: 221 - 358 nm
Operating temperature: -55 ~ +170â°c
Storage temperature: -55 ~ +170â°c
Soldering temperature (3s): 260â°c
Reverse voltage: 20 v

Properties of the SG01D-5LENS UV photodiode
Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
Radiation sensitive area A = 11.0 mm2
TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10uW/cm2 peak radiation results a current of approx. 350 nA

Properties of the SG01M-5LENS UV photodiode
Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
Radiation sensitive area A = 11.0 mm2
TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10uW/cm2 peak radiation results a current of approx. 140 nA

TOCON_C2
UVC-only SiC based UV photodetector with integrated amplifier

Properties of the TOCON_C2 UV Photodetector
* UVC-only SiC based UV photodetector in TO5 housing with concentrator lens cap
* 0 - 5 V voltage output
* peak wavelength at 275 nm
* max. radiation (saturation limit) at 254 nm is 180 nW/cm2, minimum radiation (resolution limit) is 18 pW/cm2
* Applications: low UVC radiation detection, occupational safety

TOCON_C2 UV Photodetector Specifications
Typical Responsivity at Wavelength 254 nm: 28mV/nW/cm2
Wavelength of max. Spectral Responsivity: 275nm
Responsivity Range: 225 - 287nm
Supply Voltage: 2.5 - 5V
Dark Offset Voltage: 50µV
Temperature Coefficient at Peak: < -0.3%/K
Current Consumption: 150µA
Bandwidth (-3 dB): 15Hz
Risetime (10-90%): 0.075s
Operating Temperature: -25 ~ +85'C
Storage Temperature: -40 ~ +100'C
Soldering Temperature (3s): 300'C

Sic uv photodiode sg01m-5lens
Concentrator lens sic based uv photodiode avirtual = 11.0 mm2

Properties of the sg01m-5lens sic uv photodiode
* broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation
* radiation sensitive area a = 11.0 mm2
* to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
* 10âµw/cm2 peak radiation results a current of approx. 140 na

Specifications
Typical responsivity at peak wavelength: 0.130/aw
Wavelength of max. Spectral responsivity: 280 nm
Responsivity range (s=0.1*smax): 221 - 358 nm
Sensitive area (chip size = 0.20 mm2): 11.0 mm2
Dark current (1v reverse bias): 0.7 fa
Capacitance: 50 pf
Short circuit (10uw/cm2 at peak): 140 na
Temperature coefficient: < 0.1 %/k
Operating temperature: -55 - +170 'c
Storage temperature: -55 - +170 'c
Soldering temperature (3s): 260 'c
Reverse voltage: 20 v