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Top Supplier Cities : Shenzhen   Zhengzhou   Shanghai  
Oct-19-24
 
Made of high-performance polytetrafluoroethylene (PTFE) material, it has excellent chemical inertness, high temperature resistance, low friction coefficient and excellent electrical performance. This wafer box is particularly suitable for wafer etching and transportation that requires a highly clean, low-pollution environment.

Mobile: +86-153 6614 0844
Wechat/Whatsapp: +86-153 6614 0844
Mail: ClairBZH@gmail.com
Oct-19-24
 
Made of high-performance perfluoroalkoxy polymer (PFA), it exhibits excellent chemical stability, high temperature resistance, and low friction coefficient, suitable for various harsh chemical environments.
Jul-15-15
Supplier From Shanghai, Songjiang, China
Apr-25-08
Supplier From Jiaxing, China
Oct-30-08
Supplier From Zhejiang, China
97 Wafers Suppliers
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Feb-08-10
Supplier From Shanghai, China
Oct-25-12
Supplier From Shanghai, China
Jul-29-14
Supplier From Shenzhen, Guangdong, China
Dec-23-21
Supplier From China
Oct-24-18
Supplier From Jiashan, China
Jun-25-20
 
Product name: 2-12 Inch Orientation 100/111/110 SSP Prime/Dummy Grade Silicon Wafer
Place of Origin: China
Material: Silicon
Diameter:2-12 inch
Thickness: 100-1500um
Orientation: 100/110/111
Type/Dopant: intrinsic or P/B or N/Ph
Grade: prime/dummy
Bow/Warp:
Apr-22-14
Supplier From Dongguan, Guangdong, China
 
Size: 19*11cm
Necklace size:25cm
Weight:90g

Infant baby kid washable silicone feeding bib

100% brand new and high quality
Can be safely washed in the dishwasher or wiped clean
Roll up bib for easy travel and storage
Has a built in crumb catcher and adjustable clasp
For use on babies 6 months and older
All products have been tested for safety
These silicone bibs do not contain lead, bpa, phthalates, latex, or pvc
Mar-05-10
Supplier From Shijiazhuang, Hebei, China
 
Now our products including 125*125 and 156*156, and all of them is high inner quality and surface quality

Crystal structure Mono-crystalline

Crystal method CZ

Conductance Type P

Dopant B

dimension 125*125í+0.4 125*125í+0.4 156*156í+0.4

Diameter ª¦150í+0.4 ª¦165í+0.4 ª¦200í+0.4

Crystal orientation <100>í+1

Resistivity( ª+.cm) 1-3/3-6

Lifetime( ª¦s) í¦15

Carbon concentration( atoms/cm3 ) í_5*1016

Oxygen concentration( atoms/cm3 ) í_0.95*1018.


300pcs/box.
Feb-08-10

Ic Grade Silicon Wafer

$10
MOQ: Not Specified
 
(2" 3" 4", 6",8",12") , (N/P), (<100> , <111>)
One or tow sides polished
IC grade silicon wafers.


25pcs/lot.
Feb-08-10
 
We can supply (2" 3" 4", 6",8",12") , (N/P), (<100> , <111>) one or two sides polished IC silicon dummy(test) wafers.

25pcs/Lot.
Feb-08-10

Sio2 Silicon Wafer

$10
MOQ: Not Specified
 
We can supply (2" 3" 4", 6") , (N/P), (<100> , <111>) IC silicon wafer.

25pcs/lot
Oct-30-09
 
High quality and good surface quality to meet the updating request of pv development and reduce the production cost.
Crystal structuremono-crystalline
Crystal method cz
Conductance typep
Dopant b
Dimension125*125ía0.4156*156ía0.4
Diameter ª¦150ía0.4 ª¦165ía0.4ª¦200ía0.4
Crystal orientation <100>ía1
Resistivity( ª+.Cm) 1-3/3-6
Lifetime( ª8s) í²15
Carbon concentration( atoms/cm3 )ín5*1016
Oxygen concentration( atoms/cm3 )ín0.95*1018


125*125 and 156*156
Mar-04-09
Supplier From Shanghai, China
 
Silicon wafers.
Mar-19-08
 
Multicrystalline silicon wafers

1.Material: multicrystalline silicon
2.Growth method: directional solidification
3.Conductivity type: p-type (boron doped), astm f42
4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121
5.Carbon concentration: n 1x1018 at./cm3, astm f 121
* oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17.

6.Square side: (156.0 0.5) mm
7.Symmetry as per the drawing in the enclosure no. 1
8.Thickness: (200 30) µm, astm f 533
9.Ttv: < 50 µm, astm f657
10.Bow < 50 µm, astm f 534
11.Surface saw damage depth µm < 20 (< 15 typically)
12.Saw traces µm <5
13.Resistivity: 0.5 ¿c 2.0 Ω•cm, astm f 43
14.Minority carriers lifetime: > 2 µs, astm f 28

15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed.
.
16.Customer may request to receive reference samples

17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation.
18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection.



Geometry:
Square side angle:900, 5
Chamfer: 1, 5 mm0, 5mm at 452
Jul-22-15
Supplier From Shenzhen, Guangdong, China
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