SILICON WAFERS are the building blocks of modern technology, they provide the substrate onto which circuits are constructed. We offer Prime, Test, Monitor, SEMI standard, and customized silicon wafers in all diameters from 2�¢?�³ to 300mm. Our Wafers meet the SEMI standards, along with customized options.
Silicon On Insulator (SOI) Wafers: Chips fabricated on SOI wafers achieve 30% faster speeds and 80% lower power demands compared to CMOS devices. The SOI structure consists of three layers: a top active device layer for transistor fabrication, a buried oxide (BOX) insulator layer, and a bottom handle wafer layer.
Silicon Float Zone Wafers: is a crystal growth technique that produces highly pure silicon wafers with fewer impurities than traditional methods.
Silicon Thermal Oxide Wafers: Has high quality silicon thermal oxide wafers in all diameters from 2�¢?�³ to 300mm.
Silicon Nitride Wafers: Has different option of film processing for your silicon needs, including LPCVD nitride.
On Insulator (SOI): Has high quality silicon thermal oxide wafers in all diameters from 2�¢?�³ to 300mm.
Fused Silica Wafers: is the amorphous phase of quartz (SiO2).
Borofloat 33 Glass Wafers: is used in a wide range of applications like micro-optics, sensors, microlithography, semiconductor engineering, lighting, medical technology.
MOQ: 10,000 Barrels per Month
Supply Ability: 1,000,000 Barrels per Month
JP54 Technical Specifications:
ADDITIVES
Antioxidant in hydro processed fuel mg/l min 17 max 24 Antioxidant non hydro processed fuel mg/l max 24 Static dissipater first doping ASA- 3 mg/l max 1 Stadis 450 mg/l max 3
COMBUSTION PROPERTIES
Specific energy, net mi/kg min 18.4 D 4808 Smoke point mm min 19 D 1322 Lumininomitter number min 45 D 1740 Naphtales % vol max 3 D 1840 Propriety unit min max result test ip method ASTM
COMPOSITION
Total acidity mg KOH /g max 0.01 354 D 3242 Aromatic % vol max 22.0 158 D 1318 Sulphur, total % mass max 0.30 107 D 1266/2622 Sulphur mercaptan % mass max 0.003 342 D 3227 Doctor test 30 D 4952
VOLATILITY
Initial boiling point centigrade max report 123 D 96
10% vol at C 240
20% vol at C report
50% vol at C report
80% vol at C report
End point centigrade max 42 170/303 D 56 / 3828 Density at 15 C kg m2 min /max 776/840 180/385 D 1298
LOW TEMPERATURES PROPERTIES
freezing point centigrade max 40 15 D 1298
Corrosion copper (2hrs at 100 C)
Corrosion silver (4 hrs at 500C) max 1 227
STABILITY
Thermal stability control temp. 280C 323
Filter pressure, differential mm. Hg max 25
Tube deposit rating (visual) max <3
CONTAMINATION
Existent gum mg/100 ml max 7 131 D 361 Water reaction, interface rating max 16 258 D 1084 Fuel whit static dissipater additives min 75 D 3648 Fuel without static dissipater additives min 85
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