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Multicrystalline silicon wafers

1.Material: multicrystalline silicon
2.Growth method: directional solidification
3.Conductivity type: p-type (boron doped), astm f42
4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121
5.Carbon concentration: n 1x1018 at./cm3, astm f 121
* oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17.

6.Square side: (156.0 0.5) mm
7.Symmetry as per the drawing in the enclosure no. 1
8.Thickness: (200 30) µm, astm f 533
9.Ttv: < 50 µm, astm f657
10.Bow < 50 µm, astm f 534
11.Surface saw damage depth µm < 20 (< 15 typically)
12.Saw traces µm <5
13.Resistivity: 0.5 ¿c 2.0 Ω•cm, astm f 43
14.Minority carriers lifetime: > 2 µs, astm f 28

15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed.
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16.Customer may request to receive reference samples

17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation.
18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection.



Geometry:
Square side angle:900, 5
Chamfer: 1, 5 mm0, 5mm at 452

A container for carrying semiconductor wafers/silicon wafers, resistant to acid, alkali, and corrosion (strong acid, strong fluoric acid, strong alkali), capable of laser engraving, and able to install RFID. Maintain tracking of carriers and materials.
Mainly used for cleaning, using, and transporting wafers in the acid-base process of semiconductor etching departments.
#wafercleaning #semiconductor #Newenergy #wafers

Made of high-purity resin Teflon, it is resistant to strong acids and alkalis, and can withstand high temperatures: -200~+250C. The surface is smooth, non-stick, and easy to clean. Wafer Container specifications and styles can be customized.

Advantage of
top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Technology : Diamond wire cutting
Type : P type
Resistance:1~3μs
minority carrier:>2 μs
Hem width:157.00~157.25mm
Thickness:200±20μm
Transfer efficiency:>18.8%

Advantage of top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer ?The production process is simple, cost-effective, and reduces silicon waste ?High conversion efficiency, low fragmentation rate and low optical attenuation ?Manufacturing Specialization, Intelligence and Greening ?Customized products to meet customer

Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3
minority carrier:>2
Hem width:157.00~157.25mm
Thickness:200±20 m
Transfer efficiency:>18.8%
Advantage of
top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs

Advantage of
156x156mm 200um High efficiency silicon wafers
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3
minority carrier:>2
Hem width:157.00~157.25mm
Thickness:200±20μm
Transfer efficiency:>18.8%

Name: High efficiency
polycrystalline silicon block
Technology :Semi-melting
Type: P Type
Resistance:1~3©cm
minority carrier :>6s
Hem width:157.00~157.25mm
Angle of Chamfer:1~2mm
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%

Name: High efficiency
polycrystalline silicon block
Technology :Semi-melting
Type: P Type
Resistance:1~3©cm
minority carrier :>6s
Hem width:157.00~157.25mm
Angle of Chamfer:1~2mm
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%

Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%
Name: High efficiency
polycrystalline silicon block
Technology :Semi-melting
Type: P Type
Resistance:1~3©cm
minority carrier :>6s
Hem width:157.00~157.25mm
Angle of Chamfer:1~2mm

Advantage of
top quality factory price 156x156mm 200um high quality Hot Sales A Grade polysilicon wafer Manufacturer
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Name: High efficiency polysilicon wafer
Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%

Advantage of
156x156mm 200um High efficiency silicon wafers
The production process is simple, cost-effective, and reduces silicon waste
High conversion efficiency, low fragmentation rate and low optical attenuation
Manufacturing Specialization, Intelligence and Greening
Customized products to meet customer needs
Name: High efficiency polysilicon wafer

Technology : Diamond wire cutting
Type : P type
Resistance:1~3s
minority carrier:>2 s
Hem width:157.00~157.25mm
Thickness:200±20m
Transfer efficiency:>18.8%