Tocon-Abc10 Sic Uv Photodetector

Properties of the sic uv photodetector tocon-abc1
* broadband sic based uv photodetector in to5 housing with concentrator lens cap
* 0 - 5 v voltage output
* peak wavelength at 280 nm
* max. Radiation (saturation limit) at peak is 18 nw/cm2, minimum radiation (resolution limit) is 1.8 pw/cm2
* applications: very low uv radiation, flame detection

Specifications
Typical responsivity at peak wavelength: 280 mv/nw/cm2
Wavelength of max. Spectral responsivity: 280 nm
Responsivity range (s=0.1*smax): 221 - 358 nm
Supply voltage: 2.5 - 5 v
Dark offset voltage: 700 uv
Temperature coefficient at peak: < -0.3 %/k
Current consumption: 150
Bandwidth (-3 db): 15 hz
Risetime (10-90%): 0.182 s
Operating temperature: -25 - +85'c
Storage temperature: -40 - +100'c
Soldering temperature (3s): 300'c

Properties of the TOCON_ABC1
Broadband SiC based UV photodetector in TO5 housing with concentrator lens cap
0 to 5 V voltage output
peak wavelength at 280 nm
max. radiation (saturation limit) at peak is 18 nW/cm2, minimum radiation (resolution limit) is 1.8 pW/cm2
Applications: very low UV radiation, flame detection

INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.

Sic uv photodiode sg01m-5lens
Concentrator lens sic based uv photodiode avirtual = 11.0 mm2

Properties of the sg01m-5lens sic uv photodiode
* broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation
* radiation sensitive area a = 11.0 mm2
* to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
* 10âµw/cm2 peak radiation results a current of approx. 140 na

Specifications
Typical responsivity at peak wavelength: 0.130/aw
Wavelength of max. Spectral responsivity: 280 nm
Responsivity range (s=0.1*smax): 221 - 358 nm
Sensitive area (chip size = 0.20 mm2): 11.0 mm2
Dark current (1v reverse bias): 0.7 fa
Capacitance: 50 pf
Short circuit (10uw/cm2 at peak): 140 na
Temperature coefficient: < 0.1 %/k
Operating temperature: -55 - +170 'c
Storage temperature: -55 - +170 'c
Soldering temperature (3s): 260 'c
Reverse voltage: 20 v

Concentrator lens sic based uv photodiode sensor sg01d-5lens
Avirtual = 11, 0 mm2

Properties of the sg01d–5lens uv photodiode
• broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
• radiation sensitive area a = 11, 0 mm2
• to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µw/cm2 peak radiation results a current of approx. 350 na

About the material silicon carbide (sic)
Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).

Options
Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

Designed with advance uv detecting technology according to who standard
Uv mode: displays uv index from 0 to 18
Adjustable skin tone setting: allows user to select skin type from 1 to 4
Adjustable spf setting: allows user to input spf protection level from 0 to 99
Exposure mode: after personal skin type & spf selection is made, sensor will
Indicate
How much sun exposure is acceptable
Temperature mode: gives ambient temperature, °c / °f switchable
Sunburn alarm: will alert user through beeping that reapplication of
Sunscreen is
Necessary
Sporty design with 14cm strap in pink, blue, yellow, orange for selection,
Easy to carry & use
Low power cosuption: stand-by 10ua working 1ma
Application:
Good for skiing, water skiing, swimming sunbathing, camping, bicyling & outdoor activities

SG01M-B18
UVB-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-B18 UV Photodiode
* UVB-only sensitivity, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2500 nA

SG01M-B18 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 - 309nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak) : 2500nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

Properties of the sg01d-a18 uv photodiode
* uva-only sensitivity, ptb reported high chip stability
* active area a = 0.50 mm2
* to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10µw/cm2 peak radiation results a current of approx. 1.85 na

Spectral characteristic
Typical responsivity at peak wavelength: 0.037/aw
Wavelength of max. Spectral responsivity: 331nm
Responsivity range: 309 - 367nm

Active area: 0.50mm2
Dark current (1v reverse bias): 1.7fa
Capacitance: 125pf
Short circuit (10µw/cm2 at peak): 1.85na
Temperature coefficient: < 0.1%/k

Maximum rating
Operating temperature: -55 - +170'c
Storage temperature: -55 - +170'c
Soldering temperature (3s): 260'c
Reverse voltage: 20v