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Guvb-T11Gd-L Uv-B Sensor

(1.1)
Supplier From China
Jul-07-17

1. Uv sensor guvb-t11gd-l features
Aluminium gallium nitride based material
Schottky-type photodiode
Photovoltaic mode operation
Good visible blindness
High responsivity & low dark current

2. Uv sensor guvb-t11gd-l applications
Uv-b lamp monitoring
Uv-b led monitoring

3. Uv sensor guvb-t11gd-l absolute maximum ratings
Storage temperature: -40~90'c
Operating temperature: -30~85'c
Reverse voltage: 3v
Forward current: 1ma
Optical source power range: 0.01âµ~100m w/cm2
Soldering temperature: 260'c

4. Uv sensor guvb-t11gd-l characteristics (at 25'c)
Dark current(max.): 20na
Photo current(typ.): 1.5
Temperature coefficient: 0.1%/'c
Responsivity: 0.13a/w
Spectral detection range: 220~320nm
Active area: 1.536mm2

Price and Minimum Quantity

Price: $1
MOQ: Not Specified
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1. Ftatures
- Chip size: 0.4mm, SMD 3528 PKG
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3. Absolute Maximum Ratings
Storage Temperature: -40~90'C
Operating Temperature: -30~85'C
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Optical Source Power Range: 0.1u~100m W/cm2
Soldering Temperature: 260'C

5. Characteristics (at 25'C)
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Aluminium Gallium Nitride Based Material
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2. Applications
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3. Absolute Maximum Ratings
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Operating Temperature: -30~85'C
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1. Features
Gallium Nitride Based Material
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