Features:
*Digital Color display
*Simultaneous X and Y views
*9 Sec.splice time,40 Sec.tube-heat time
*Large capacity internal battery
*SYSTEM TEST ensures the best working condition
*User programmable
*Auto check fiber end face
*Auto calibrate parameters
*Store 8000 groups of splice results
*Multiple language options
Specifications:
Applicable fibers: SM,MM,DS,NZ-DS,EDF;
Cladding diameter:100 to 150um;
Coating diameter:100 to 1000um;
Fiber cleaved length:8~22mm(standard);
Splicing mode:Auto&Manual;
Average splice loss:0.02dB(SM),0.01dB(MM),0.04dB(DS),0.04dB(NZDS);
Return loss:í¦ 60dB;
Environment conditions:-25~50íµ(operation temperature),0~95% RH (humidity),0~5000m (altitude);
Storage environment:-40~80íµ(temperature),0~95%RH(humidity);
Protection sleeve length:20mm,40mm,60mm;
Tension test:2.0N (Standard);
Language: English,Chinese,Korea,Russian,Spanish etc;
Interface:RS232 interface&video output;AC adaptor:85~260V input voltage;
Power supply:Internal battery:12V voltage,10Ah, up to 200 times of continuous splices and heats;DC adaptor:12V voltage,optional multipurpose external battery;
Dimensions:160(W)í-160(H)í-180(D)mm;
Weight:4.2kg;
INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:
High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
The Fujikura FSM-60S fusion splicer sets the standard for core alignment fusion splicing by incorporating a user-friendly interface with enhanced features to provide the most rugged and reliable fusion splicer in the market today. The new rugged construction adds improved reliability by resisting shock, dust, and rain, and can withstand a 30 drop test.
It is high cost performance:high quality but low sale price.It's available for export worldwide.
Features:
*color lcd monitor & 256 magnification
*compact & light weight
*reversible monitor with control panel on each side
*max. Wind velocity of 15m/s
*8 sec.Splice time, 40 sec.Tube-heat time
*simultaneous x and y views
*large capacity internal battery
*system test ensures the best working condition
*user programmable
*auto check fiber end face
*auto calibrate parameters
*store 8000 groups of splice results
*multiple language options
Specifications:
Applicable fibers: Sm, mm, ds, nz-ds, edf;
Cladding diameter:100 to 150um;
Coating diameter:100 to 1000um;
Fiber cleaved length:8~22mm (standard);
Splicing mode:auto & manual;
Average splice loss:0.02db(sm), 0.01db(mm), 0.04db(ds), 0.04db(nzds);
Return loss:í² 60db;
Environment conditions:-25~50íµ(operation temperature), 0~95%rh (humidity),
0~5000m (altitude);
Storage environment:-40~80íµ(temperature), 0~95úÑrh (humidity);
Protection sleeve length:20mm, 40mm, 60mm;
Tension test:2.0n (standard);
Language: english, chinese, korea, russian, spanish etc;
Interface:rs232 interface & video output;ac adaptor:85í½260v input voltage;
Power supply:internal battery:12v voltage, 10ah, up to 200 times of continuous splices and heats; dc adaptor: 12v voltageú¼optional multipurpose external battery;
Dimensions:170(w)íß140(h)íß170(d) mm;
Weight:3.3kg
Applicable fiber SM(G.652), MM(G.651), DS(G.653), NZDS(G.655), others(including G.657)
Fiber count Single
Applicable fiber dimensions Cladding diameter: 80 -150m, Coating diameter: 160 -900m
Typical splice loss 0.02dB(SM), 0.01dB(MM), 0.04dB(DS), 0.04dB(NZDS)
Return loss >60db
Fiber cleaved length 10-16mm (coating diameter< 250m ), 16mm(coating diameter: 250-1000m )
Splicing program 40 groups
Operate mode Manual, Automatic
Auto-heating Available
Typical splicing time 8 seconds
Tube heating time 26 seconds for 60mm and 40mm shrinkable sleeves
Fiber view magnification 250X(X or Y view), 125X(X and Y view)
Viewing method and display 2 CMOS cameras, 4.3 inch color LCD monitor
Storage of splice result 4000 results
Loss evaluation Available
Tension test 1.8-2.2N
Interface GUI menu interface, easier operation
Battery capacity 5800mAh, typical 180 cycles(splice and tube heat), pluggable inner Li-battery
Power supply Adaptor, input: AC100-240V(50/60HZ)
Electrode life More than 4000 ARC discharges, can be replaced conveniently
Terminals USB 2.0 port, for uploading splice results and upgrading software
Operating condition Altitude: 0-5000m, Humidity: 0-95%, Temperature: -10â??ï½?+50â??;Wind speed: max 15m/s
Dimension 149mm(L)x120mm(W)x127mm(H)
Weight 1.9kg including battery
Applicable fiber SM (ITU-T G.652), MM (ITU-T G.651), DS (ITU-T G.653), NZDS (ITU-T G.655), others(including G.657)
Cladding diameter 80 -150m
Coating diameter 160 -900
Typical splice loss SM 0.02dB, MM 0.01dB, DS 0.04dB, NZDS 0.04dB
Return loss
