Sg01S-A18 Uva Photodiodes Uv Sensor

Properties of the sg01d-a18 uv photodiode
* uva-only sensitivity, ptb reported high chip stability
* active area a = 0.50 mm2
* to18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10µw/cm2 peak radiation results a current of approx. 1.85 na

Spectral characteristic
Typical responsivity at peak wavelength: 0.037/aw
Wavelength of max. Spectral responsivity: 331nm
Responsivity range: 309 - 367nm

Active area: 0.50mm2
Dark current (1v reverse bias): 1.7fa
Capacitance: 125pf
Short circuit (10µw/cm2 at peak): 1.85na
Temperature coefficient: < 0.1%/k

Maximum rating
Operating temperature: -55 - +170'c
Storage temperature: -55 - +170'c
Soldering temperature (3s): 260'c
Reverse voltage: 20v

Our most advanced intelligent spot detectors, multi-criteria/multi-sensor devices use multiple sensors to detect various conditions in an environment sensing a wider range of fires with greater accuracy.

Features & Benefits:

Multi-Criteria/Multi-Sensor smoke detection
Unique ability to detect major elements of a fire
Highest nuisance alarm immunity
Advanced algorithms interpret and respond to multiple inputs

Concentrator lens sic based uv photodiode sensor sg01d-5lens
Avirtual = 11, 0 mm2

Properties of the sg01d–5lens uv photodiode
• broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
• radiation sensitive area a = 11, 0 mm2
• to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µw/cm2 peak radiation results a current of approx. 350 na

About the material silicon carbide (sic)
Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).

Options
Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

Sic uv photodiode sg01m-5lens
Concentrator lens sic based uv photodiode avirtual = 11.0 mm2

Properties of the sg01m-5lens sic uv photodiode
* broadband uva+uvb+uvc, ptb reported high chip stability, for very weak radiation
* radiation sensitive area a = 11.0 mm2
* to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
* 10âµw/cm2 peak radiation results a current of approx. 140 na

Specifications
Typical responsivity at peak wavelength: 0.130/aw
Wavelength of max. Spectral responsivity: 280 nm
Responsivity range (s=0.1*smax): 221 - 358 nm
Sensitive area (chip size = 0.20 mm2): 11.0 mm2
Dark current (1v reverse bias): 0.7 fa
Capacitance: 50 pf
Short circuit (10uw/cm2 at peak): 140 na
Temperature coefficient: < 0.1 %/k
Operating temperature: -55 - +170 'c
Storage temperature: -55 - +170 'c
Soldering temperature (3s): 260 'c
Reverse voltage: 20 v

UV Flame sensor is fire detect sensor which detecs ultraviolet rays of a flame instantly and output warning signal outside. By using emergency call equipment or adjusting the sensor connection, SKH-)$& can supervise multiple sensors at a long range.

Sg01l-5lens
Concentrator lens sic based uv photodiode avirtual = 55 mm2

Properties of the sg01l-5lens uv photodiode
Broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
Radiation sensitive area a = 55 mm2
To5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10âµw/cm2 peak radiation results a current of approx. 700 na

Sg01l-5lens uv photodiod specifications
Sensitive area: 55 mm2
Dark current: 3.5 fa
Capacitance: 250 pf
Responsivity range: 221 - 358 nm
Operating temperature: -55 ~ +170â°c
Storage temperature: -55 ~ +170â°c
Soldering temperature (3s): 260â°c
Reverse voltage: 20 v

SG01M-B18
UVB-only SiC based UV photodiode A = 0.20 mm2

Properties of the SG01M-B18 UV Photodiode
* UVB-only sensitivity, PTB reported high chip stability
* Active Area A = 0.20 mm2
* TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
* 10mW/cm2 peak radiation results a current of approx. 2500 nA

SG01M-B18 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.125/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 231 - 309nm
Active Area: 0.20mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10mW/cm2 at peak) : 2500nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170°C
Storage Temperature: -55 ~ +170°C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V

1. Uv sensor guva-c22sd features
Gallium nitride based material
Schottky-type photodiode
Photovoltaic mode operation
Good visible blindness
High responsivity & low dark current

2. Uv sensor guva-c22sd applications
Uv index monitoring
Uv-a lamp monitoring

3. Uv sensor guva-c22sd absolute maximum ratings
Storage temperature: -40~90'c
Operating temperature: -30~85'c
Reverse voltage: 5v
Forward current: 1ma
Optical source power range: 0.1âµ~100m w/cm2
Soldering temperature: 260'c

4. Uv sensor guva-c22sd characteristics (at 25'c)
Dark current: 1na max
Temperature coefficient: 0.08%/'c
Responsivity: 0.14a/w
Spectral detection range: 240~370nm
Active area: 0.076mm2