Guva-C22Sd Gan Based Uv Sensor

1. Uv sensor guva-c22sd features
Gallium nitride based material
Schottky-type photodiode
Photovoltaic mode operation
Good visible blindness
High responsivity & low dark current

2. Uv sensor guva-c22sd applications
Uv index monitoring
Uv-a lamp monitoring

3. Uv sensor guva-c22sd absolute maximum ratings
Storage temperature: -40~90'c
Operating temperature: -30~85'c
Reverse voltage: 5v
Forward current: 1ma
Optical source power range: 0.1âµ~100m w/cm2
Soldering temperature: 260'c

4. Uv sensor guva-c22sd characteristics (at 25'c)
Dark current: 1na max
Temperature coefficient: 0.08%/'c
Responsivity: 0.14a/w
Spectral detection range: 240~370nm
Active area: 0.076mm2

Our most advanced intelligent spot detectors, multi-criteria/multi-sensor devices use multiple sensors to detect various conditions in an environment sensing a wider range of fires with greater accuracy.

Features & Benefits:

Multi-Criteria/Multi-Sensor smoke detection
Unique ability to detect major elements of a fire
Highest nuisance alarm immunity
Advanced algorithms interpret and respond to multiple inputs

UV-A Sensor GUVA-C32SM

GENERAL DESCRIPTION
GUVA-C32SM supports integrated functions of ultraviolet light sensors such that can be easily configured and used in user applications.
GUVA-C32SM comprises photodiodes, amplifiers, ADC, digital control logic and I2C interface circuit.GUVA-C32SM receives UVA and outputs digital count according to the intensity. Power consumption can be minimized by proper use of power management mode.

FEATURES
- UVA sensing with 16-bit resolution
- Support UV index measurement (0 - 16)
- Programmable gain and integration time
- I2C slave interface up to 400KHz
- Power management modes
- Shutdown current : 0.8uA typical
- Supply voltage of 2.2V to 3.6V
- 2.0mm x 2.3mm x 1.4mm ,4-pin COBpackage

APPLICATIONS
Smartphone, Wearable devices, IoT, watch, weather station, bicycle navigation, gaming, accessary


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1.Features
Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

2.Applications
UV Index Monitoring
UV-A Lamp Monitoring

3. Absolute Maximum Ratings
Storage Temperature: -40~90'C
Operating Temperature: -30~85'C
Reverse Voltage: 5V
Forward Current: 1mA
Optical Source Power Range: 0.1u~100m W/cm2
Soldering Temperature: 260'C

4. Characteristics (at 25'C)
Dark Current: 1nA
Temperature Coefficient: 0.08%/'C
Responsivity: 0.14A/W
Spectral Detection Range: 240~370ã??
Active area: 0.076mm2

1.Features
- chip size:1.4mm
- package type to 46 pkg
-gallium nitride based material
-schottky-type photodiode
-photovoltaic mode operation
-good visible blindness
-high responsivity & low dark current

2. Applications
-full uv band monitoring
-uv-a lamp monitoring

3.Specifications
-spectral detection range: 220~370nm
-active area: 1.536 mm2
-responsivity : 0.18a/w
-dark current:20na
-photo current: 2.8~3.4ua
Uva lamp, 1mw/cm2

1. Features
Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

2. Applications
Full UV Band Monitoring
UV-A Lamp Monitoring

3. Absolute Maximum Ratings
Storage Temperature: -40~90'C
Operating Temperature: -30~85'C
Reverse Voltage: 5V
Forward Current: 1mA
Optical Source Power Range: 0.01µ~100m W/cm2
Soldering Temperature: 260'C

4. Characteristics (at 25'C)
Dark Current: 20nA
Photo Current: 2.8~3.4µA, 3.1µA(Typ)
Temperature Coefficient: 0.05%/'C
Responsivity: 0.18A/W
Spectral Detection Range: 220~370nm
Active area: 1.536mm2

INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.

Concentrator lens sic based uv photodiode sensor sg01d-5lens
Avirtual = 11, 0 mm2

Properties of the sg01d–5lens uv photodiode
• broadband uva+uvb+uvc, ptb reported high chip stability, for flame detection
• radiation sensitive area a = 11, 0 mm2
• to5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µw/cm2 peak radiation results a current of approx. 350 na

About the material silicon carbide (sic)
Sic provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make sic the best available material for visible blind semiconductor uv detectors. The sic detectors can be permanently operated at up to 170°c (338°f). The temperature coefficient of signal responsivity) is also low, < 0, 1%/k. Because of the low noise (dark current in the fa range), very low uv radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typical circuit on page 3).

Options
Sic photodiodes are available with seven different active chip areas from 0, 06 mm2 up to 36 mm2. Standard versionis broadband uva-uvb-uvc. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (to type), either a 5, 5 mm diameter to18 housing or a 9, 2 mm to5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).