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Guva-C22Sd Gan Based Uv Sensor

Supplier From China
Feb-09-17

1.Features
Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

2.Applications
UV Index Monitoring
UV-A Lamp Monitoring

3.Specifications
Spectral Detection Range: 240-370nm
Active area: 0.076mm2
Package: COB 2418 PKG
Chip size: 0.4mm
Responsivity: 0.14 A/W
Storage Temperature: -40 ~ +90'C
Operating Temperature: -30 ~ +85'C

Price and Minimum Quantity

Price: $1
MOQ: Not Specified

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1. Uv sensor guva-c22sd features
Gallium nitride based material
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Storage temperature: -40~90'c
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Soldering temperature: 260'c

4. Uv sensor guva-c22sd characteristics (at 25'c)
Dark current: 1na max
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Supplier From Shenzhen, Nanshan, China
 
1.Features
Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

2.Applications
UV Index Monitoring
UV-A Lamp Monitoring

3. Absolute Maximum Ratings
Storage Temperature: -40~90'C
Operating Temperature: -30~85'C
Reverse Voltage: 5V
Forward Current: 1mA
Optical Source Power Range: 0.1u~100m W/cm2
Soldering Temperature: 260'C

4. Characteristics (at 25'C)
Dark Current: 1nA
Temperature Coefficient: 0.08%/'C
Responsivity: 0.14A/W
Spectral Detection Range: 240~370ã??
Active area: 0.076mm2
Oct-17-16
Supplier From Shenzhen, Nanshan, China
 
1.Features
- chip size:1.4mm
- package type to 46 pkg
-gallium nitride based material
-schottky-type photodiode
-photovoltaic mode operation
-good visible blindness
-high responsivity & low dark current

2. Applications
-full uv band monitoring
-uv-a lamp monitoring

3.Specifications
-spectral detection range: 220~370nm
-active area: 1.536 mm2
-responsivity : 0.18a/w
-dark current:20na
-photo current: 2.8~3.4ua
Uva lamp, 1mw/cm2

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