Monocrystalline Wafers (125 * 125)
Specifications:
Origin : China
Growing Method : Cz
Elecrocoductivity type / Dopant : P/boron
Crystallographic axis orientation : <100>
Resistivity (central point, on post-annealed samples) : 0.5 6.0 ohm/cm
Carbon content : <1.0 1017cm-3
Oxygen content (k=2.45) : <1.0 1018cm-3
Minor carrier lifetime : 10¦s
Leneage, twins, swirls EPD : Not allowed 2*103cm-2
Supplier: Silicon wafer, silicon wand, monocrystalline solar panel, polycrystalline solar panel and solar lamps
Services: OEM & ODM