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Double Thread Sic Heating Element

Supplier From South Korea (Republic Of Korea)
Jul-25-23

Silicon Carbide Heating ElementDescription



Silicon Carbide Heating Element can be installed and replaced while the tin bath is operation. The heaters can be installed through the side-seal, or through the side of the bath roof, and are commonly used to extend campaign lives, where conventional elements in the side zones have been broken, and insufficient power is available.



Silicon Carbide Heating Element Advantages



High purity raw materials;

High structural density;

Slow aging;

Maximum temperature being up to 1500â?? (2732�°F);

Easy to be installed and replaced.



Types and Applications of Silicon Carbide Heating Element

1. SW (Standard)

SW Silicon Carbides are used in applications ranging in temperature from 600�°C up to 1400�°C in both air and controlled atmospheres. Although the type of atmosphere used will determine the maximum recommended element temperature. This kind of silicon carbide elements can be mounted either vertically or horizontally.

2. U-TYPE

U shape Silicon Carbide is consists of two silicon carbide rod with same diameter. Each rod has both hot zone and cold end with identical resistance. Two rods are connected by the low resistance SiC. Also the connector could be used as holder according to different requirements.

3. W-TYPE

3-phase elements are available in 2 different types: SGC (Dumbbell), SGD(Standard).

These elements are self-bonded silicon carbide formed by re-crystallization of silicon carbide at high temperature. It consists of three high-purity silicon carbide rods connected at one end by a silicon carbide crossbar. SGC elements are designed for vertical installation in standard float glass bathes and SGD elements for horizontal installation. They can be connected directly on three-phase power supply and is a one-side terminal type which permits drawing out the terminals from the roof of the furnace.

4. Single Spiral Silicon Carbide and Double Spiral Silicon Carbide:

They are made from silicon Carbide powder, and have two shapes: single and double sprial silicon carbide heating element. They are widely used in all kinds of kilns and furnaces.

Price and Minimum Quantity

Price: $10
MOQ: Not Specified

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Gaas Wafers, WAFERS

$350 - $2.50K / Piece (CIF)
MOQ: 10  Pieces
Sample Available
Supplier From South Hackensack, New Jersey, United States
 
GaAs Wafers
Gallium Arsenide (GaAs) wafers are critical components in modern electronics and photonics due to their superior electrical and optical properties.

Here�¢??s a focused overview:

GaAs�¢?? is shorthand for Gallium Arsenide, a compound made up of two elements, and the semiconductor used to manufacture GaAs wafers. GaAs is used as a direct bandgap semiconductor, which in layman�¢??s terms, simply means that particles such as electrons can pass through components much quicker and with very little interference. This makes them particularly useful in optical devices because photons, the basic unit for all light, can pass through lenses with ease.

What are GaAs Wafers Use For?

The use of GaAs wafers is dictated by the capabilities of the compound. Because GaAs is a direct bandgap semiconductor, it is especially useful in sensitive electronic equipment that requires amplifying low frequencies. Some of the most common applications for GaAs wafers include:

Radars

Radio communication equipment

Tachometers

Satellites

Microwave

LEDs
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General Description

Production Process: made into blank, silicided under high temperature and re-crystallized.
Character: high-applied temperature, anti-oxidization, anti-corrosion, long service life, little deformation, easy installation and maintenance.
Usage: used in various high temperature electric furnaces and other electric heating devices, such as in the industries of magnet, ceramics, metallurgy, glass, and machinery.
Physical properties of element
Specific Gravity 2.6~2.8g/cm³ bend strength >300kg
Hardness >9 MOHâ?²S Tensile strength >150kg/cm�³
Porosity rate

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