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High Frequency Printed Circuits Board

Supplier From China
Sep-10-19

Material Rogers 4350B & Hybrid High Frequency Board
Surface treatment: Immersion Gold
Application : Micro-electronics

Price and Minimum Quantity

Price: $2
MOQ: Not Specified

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Layer: 1 to 32 layers
Material type: FR-4, CEM-1, CEM-3, High TG, FR4 Halogen Free, Rogers
Board thickness: 0.21mm to 7.0mm
Copper thickness: 0.5 OZ to 7.0 OZ
Copper thickness in hole: >25.0 um (>1mil)
Max. Board Size: 23 ¡¨¢ 25 (580mm¡¨¢900mm)
Min. Drilled Hole Size: 3mil (0.075mm)
Min. Line Width: 3mil (0.075mm)
Min. Line Spacing: 3mil (0.075mm)
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D K 3.38 0.04

Layer 2Layers

DielectricsThickness 0.508mm(20mil)

Finished Thickness 0.6mm

Material Copper Thickness (17m)

Finished Copper Thickness 1OZ(35m)

surface treatment Immersion Silver

Application communication infrastructure, computers, aerospace

RO4003C RO4350B Data-Sheet
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Inp Wafers, WAFERS

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MOQ: 10  Pieces
Sample Available
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INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:

High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.

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