Supplier: Electronic components motorcycle parts and auto parts like ic, adapter, connector, sensor, module, fuse, transformer, capacitor, resistor, led light, diode, triode, switch, buzzer, potentiometer, relay and spark plugs.
Specifications:
1adopts the iternational most advanced plc control technology.
2.It can perform the forward and backward winding and counting operation,
Power failure protection, wire disconnection protection, stop brake, setup
Of winding position, location and fault prompt.
3.It can set the procedures and display the operation state through the
Touch panel.
4.It,s english interface can properly display the wire diameter, rotatin
Speed, number of turns and nunber of layers.
5.Its main sharft control adopts the frequencyconversion stepless speed
Adjustment, with the characteristics of short driving chain, large driving
Torque, wide speed adjustment range, low noise.
6.It,s speed control has two modes, automatic setup and foot switch speed
Adjustment.
7.It,s wire arranging operation is finished by the stepping motor and
Highprecision ballspline, the control precision can reach as high as 0.001mm.
8.The counting operation adopts the lighgrid rotary encoder, the output
Rotation speed and angle signal are traced with the data.
9.The tension controller employs the west germany damping device, so as to
The wire easy disconnection or coul loosing and dropping for the gension
Unbalance and easy fluctuation.
Features:
Simple operation
Low noisy
Reliable system operation
Complete function
Wide application range
Compact structure
High winding precision
Long life service
Yr260j/360j can adjust the processing range with the iron core and framework size.
Through changing the different clapm.It can wind the coils of various
Casting pts, it's necessary winding equipment for producin gthe pts with
Rshaped enclosed iron core, also the preferred electric engineering
Equipment in the pt industy.
INDIUM PHOSPHIDE (InP) WAFERS are semiconductor materials made of indium phosphide, a compound semiconductor that is widely used in high-frequency and optoelectronic applications. Due to its efficient electron mobility and direct bandgap properties, InP is favored for devices such as:
High-speed electronics
Laser diodes
Photodetectors
Telecommunications applications, including optical fiber communication
We offer the following InP Wafers:
Undoped InP Wafers: These are pure InP with no intentional doping, used in various applications where intrinsic properties are required.
N-type InP Wafers: Doped with donor impurities (such as tellurium) to increase electron concentration, useful in transistors and high-speed electronics.
P-type InP Wafers: Doped with acceptor impurities (such as zinc) to create holes in the semiconductor, used in light-emitting devices and other optoelectronics.
InP Substrates: Used as a base for growing other semiconductor materials in heterostructures for various applications.
InP Membrane Wafers: Thin layers of InP used for specific applications, including applications in flexible electronics and advanced photonic devices.
InP-based Quantum Dot Wafers: Engineered to create quantum dots that can be used in photonic and optoelectronic devices for enhanced performance.
Product Introduction
Capacitive voltage transformer (CVT) in calibration the test must be conducted under the condition of 50Hz frequency complex geographical condition on site at the same time the traditional experiment device is difficult to meet the requirements of on-site handling testing series resonance booster device is first used in domestic field tunable resonance device has been widely used in domestic 500 kv and below the field calibration of capacitor voltage transformer.
Product Parameters
Technical parameters
Rated Capacity 80kVA
rated voltage 160kV
Adjustable inductance range 65~130H
Rated frequency 50Hz
Rated current 0.5A
Adjustable gap range 0~300mm
1.Operating temperature range:-20 to +45
2.Storage temperature:-40 to 70
3.Switching frequency:1khz to 200khz
4.Withstanding voltage:1500/3750vac for 1 minute between primary and secondary
5.Insulation resistance:500vdc 100m¦¸ miin. Between primary&secondary.
