SG01XL-5
Broadband SiC based UV photodiode A = 7,6 mm2

Properties of the SG01XL-5 UV Photodiode
* Broadband UVA+UVB+UVC, PTB reported high chip stability
* Active Area A = 7.6 mm2
* TO5 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
* 10µW/cm2 peak radiation results a current of approx. 99 nA

SG01XL-5 UV Photodiode Specifications
Typical Responsivity at Peak Wavelength: 0.130/AW
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range: 221 - 358nm
Active Area: 7.6mm2
Dark Current (1V reverse bias): 25.3fA
Capacitance: 1900pF
Short Circuit (10µW/cm2 at peak): 99nA
Temperature Coefficient: < 0.1%/K
Operating Temperature: -55 ~ +170'C
Storage Temperature: -55 ~ +170'C
Soldering Temperature (3s): 260'C
Reverse Voltage: 20V