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Sending Inquiry For: Sic Based Uv Photodiode Sg01M-5Lens

Nov-25-16
Shenzhen, Guangdong, China
 
Properties of the SG01M-5LENS UV photodiode
Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
Radiation sensitive area A = 11.0 mm2
TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
10uW/cm2 peak radiation results a current of approx. 140 nA
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